Factory pretium de ternary thermoelectric bismuth telluride n-genus bi2te2.7se0.3 obstructionum et pulveris

Factory pretium de ternary thermoelectric bismuth telluride n-genus bi2te2.7se0.3 obstructionum et pulveris featured image
  • Factory pretium de ternary thermoelectric bismuth telluride n-genus bi2te2.7se0.3 obstructionum et pulveris
  • Factory pretium de ternary thermoelectric bismuth telluride n-genus bi2te2.7se0.3 obstructionum et pulveris
  • Factory pretium de ternary thermoelectric bismuth telluride n-genus bi2te2.7se0.3 obstructionum et pulveris

Short description:

Product Name: P-Type Bi0.5sb1.5te3

N-genus Bi2te2.7se0.3

Puritas: 99.99%, 99,999%

Species: obstructionum ingot vel pulveris

Notam: EPOCH, Cham

Supple Ternary Thermelectric Bismuth Telluride P-Type Bi0.5sb1.5te3 et N-genus Bi2te2.7se0.3


Product Detail

Product Tags

Product Description

Brevis

Product Name: P-Type Bi0.5sb1.5te3

N-genus Bi2te2.7se0.3

Puritas: 99.99%, 99,999%

Species: obstructionum ingot vel pulveris

Notam: EPOCH, Cham

Supple Ternary Thermelectric Bismuth Telluride P-Type Bi0.5sb1.5te3 et N-genus Bi2te2.7se0.3

Performatio

Tig-mordere-p / n-II Thermoelectric Ingot est crevit cum stanio ex Bi, si, te, se, specialis doping et unique crystallizing processibus. Et Bi2te3-fundatur thermoelectric Ingot est crevit specialiter et optimized ad facere thermoelectric modules qui propter Convertendo calor fons vndique a C ℃ (373k) ad CCCL ℃ (623k) in electricity. Fere, in mediocris figure meriti zt nostra P-genus et N-genus ingots super temperatus range 300k ad 600k est maior quam 0.7. Module factus est cum tali ingots potest consequi V% efficientiam cum CCL ℃ Delta T. Interim, nostri Ingot est featured cum bono mechanica vires et altus firmum sit, providente potentia generationem modules.
Item
Bismuth telluride, Bi2te3
N Typus
Bi2te2.7se0.3
P type
Bi0.5te3.0sb1.5
Specificatio
Obstructionum ingot aut pulveris
ZT
1.15
Stipare
Vacumm sacculi stipare
Applicatio
Refrigeration, refrigerationem, thermo, scientia inquisitionis
Notus
Epoch

Specificatio

Specificaiton
P-Type
N-Type
Attendendum
Typus Number
P-II Bite-
N-II bite-
  
Diameter (mm)
XXXI ± II
XXXI ± II
  
Longitudo (mm)
CCL ± XXX
CCL ± XXX
  
Density (G / CM3)
6,8
7,8
  
Electrical Conductivity
2000-6000
2000-6000
300k
Seebeck coefficiens α (Μ UK-I)
≥140
≥140
300k
Kessinger Publishing C (WM, I K)
2.0-2.5
2.0-2.5
300k
Pulveris Factor P (WMK, II)
≥0.005
≥0.005
300k
Zt valorem
≥0.7
≥0.7
300k
Notus
CHEM

Applicatio

Ad formare p / n coniunctas, in semiconductor refrigeratio, thermoelectric pulveris generatio etc.

Nostra commoda

Rare-Terra-Scandium, Oxide-cum-magna-Price-II

Service possumus providere

I) Formalis contractus potest signati

II) Confidentiality consensu potest esse signed

III) Septem diebus refugium pignus

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Ita utique possumus providere MSDS, CAA, MOA, certificatorium originem etc.

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